Multi-Gain-Stage InGaAs Avalanche Photodiode With Enhanced Gain and Reduced Excess Noise

InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product.

Increasing reliance on the Internet places greater and greater demands for high-speed optical communication systems. Increasing their data transfer rate allows more data to be transferred over existing links. With optical receivers being essential to all optical links, bandwidth performance of key components in receivers, such as avalanche photodiodes (APDs), must be improved. The APDs rely on ...

Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping

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DESIGN AND PROPERTIES OF InGaAs/InGaAsP/InP AVALANCHE PHOTODIODE

An avalanche photodiode (APD) based on an InGaAs/InGaAsP/InP structure containing separated absorption, charge and multiplication layers (SACM) was designed, fabricated and tested. The InGaAsP charge layer at the heterointerface between the InGaAs absorption and InP multiplication region allows optimization of the electric field distribution and suppression of the carrier capture at the heteroi...

Resonant excess quantum noise in focused-gain lasers.

We demonstrate that the transverse eigenmodes in a waveguide that combines a parabolic index guide with a Gaussian gain guide can be highly nonorthogonal. The excess-noise factor K that arises from this nonorthogonality exhibits resonant features with maximum values that can easily reach K approximately 400 . This simple model applies directly to stable-cavity microchip lasers with focused gain.

InP/InGaAS Symmetric Gain Optoelectronic Mixers